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Bipolar junction transistor
A Bipolar Junction Transistor, or BJT, is a semiconductor device that is an essential building block in electronic circuits for amplification, switching, and signal modulation. It consists of three layers of semiconductor material – the emitter, base, and collector – forming either an NPN (negative-positive-negative) or PNP (positive-negative-positive) configuration. The BJT operates based on the movement of charge carriers (electrons or holes) between these layers, controlled by the current flowing through the base region.
In an NPN BJT, electrons move from the emitter to the collector, while in a PNP BJT, holes (positive charge carriers) move in the opposite direction. The current flow through the base terminal controls the larger current between the collector and emitter, making the BJT a current-controlled device. BJTs are widely used in analogue circuit applications due to their high gain and linearity. The amplification capabilities of BJTs make them suitable for applications such as audio amplifiers, radio-frequency amplifiers, and voltage regulators.
BJTs also play a vital role in digital circuits, as switches where a small input current controls a much larger output current. While modern electronic circuits often use Field-Effect Transistors (FETs) in certain applications, BJTs remain integral to electronic design, offering unique characteristics that contribute to the versatility and functionality of electronic devices.